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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF147 VHF power MOS transistor
Product specification September 1992
Philips Semiconductors
Product specification
VHF power MOS transistor
FEATURES * High power gain * Low intermodulation distortion * Easy power control * Good thermal stability * Withstands full load mismatch.
ook, halfpage 4
BLF147
PIN CONFIGURATION
3
d
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to 'General' section for further information. PINNING - SOT121 PIN 1 2 3 4 drain source gate source DESCRIPTION
g
MBB072
s
1
2
MLA876
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION SSB, class-AB CW, class-B f (MHz) 28 108 VDS (V) 28 28 PL (W) 150 (PEP) 150 Gp (dB) > 17 typ. 70 D (%) > 35 typ. 70 d3 (dB) < -30 - d5 (dB) < -30 -
September 1992
2
Philips Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF147
MAX. 65 20 25 220 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink THERMAL RESISTANCE 0.8 K/W 0.2 K/W
102 handbook, halfpage ID (A)
MRA904
handbook, halfpage
300
MGP049
Ptot (W)
(1)
200
(1) (2) (2)
10
100
1 1
10
VDS (V)
102
0 0 50 100 Th (C) 150
(1) Current is this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Short-time operation during mismatch. (2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
September 1992
3
Philips Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) VGS gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 100 mA; VGS = 0 VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 200 mA; VDS = 10 V ID = 100 mA; VDS = 10 V ID = 8 A; VDS = 10 V ID = 8 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 - 5 - - - - -
BLF147
TYP. MAX. - - - - - 7.5 0.1 37 450 360 55 - 5 1 4.5 100 - 0.15 - - - -
UNIT V mA A V mV S A pF pF pF
MGP050
handbook, halfpage
0
handbook, halfpage
60
MGP051
T.C. (mV/K) -1
ID (A) 40
-2
-3 20 -4
-5 10-2
0 10-1 1 ID (A) 10 0 5 10 15 VGS (V) 20
VDS = 28 V; valid for Th = 25 to 70 C.
VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
September 1992
4
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
handbook, halfpage
170
MGP052
handbook, halfpage
1400
MRA903
RDS (on) (m) 150
C (pF) 1200
130
800
Cis 110 400 Cos
90 0 50 100 Tj (C) 150
0 0 10 20 30 VDS (V) 40
ID = 8 A; VGS = 10 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
500
MRA902
Crs (pF)
400
300
200
100
0
0
10
20
30 VDS (V)
40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
September 1992
5
Philips Semiconductors
Product specification
VHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-AB OPERATION Th = 25 C; Rth mb-h = 0.2 K/W; RGS = 9.8 ; unless otherwise specified. RF performance in SSB operation in a common source class-AB circuit. f1 = 28.000 MHz; f2 = 28.001 MHz. PL (W) 20 to 150 (PEP) Notes 1. Optimum load impedance: 2.1 + j0 . f (MHz) 28 VDS (V) 28 IDQ (A) 1 Gp (dB) > 17 typ. 19 D (%) > 35 typ. 40 d3 (dB) (note 2) < -30 typ. -34
BLF147
d5 (dB) (note 2) < -30 typ. -40
2. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are referred to the according level of either the equal amplified tones. Related to the according peak envelope power these figures should be decreased by 6 dB.
Ruggedness in class-AB operation The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50 through all phases under the following conditions: VDS = 28 V; f = 28 MHz at rated load power.
MGP053
handbook, halfpage
30
handbook, halfpage
60
MGP054
Gp (dB)
D (%) 40
20
20
10 0 100 PL (W) PEP 200
0 0 100 PL (W) PEP 200
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.9
Gain as a function of load power, typical values.
Fig.10 Efficiency as a function of load power, typical values.
September 1992
6
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
handbook, halfpage
-20
MGP055
handbook, halfpage
-20
MGP056
d3 (dB) -30
d5 (dB) -30
-40
-40
-50
-50
-60 0 100 PL (W) PEP 200
-60 0 100 PL (W) PEP 200
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.11 Third order intermodulation distortion as a function of load power, typical values.
Fig.12 Fifth order intermodulation distortion as a function of load power, typical values.
handbook, full pagewidth
C8 C1 input 50 C3 C2 L1 L2 C9 R1 R2 C4 C5 R3 R4 L5 +VG L6 C7 R5 C6 L4 D.U.T. L3 L7
C10
C12 C14 C15
output 50
C11
C13
+VD
MGP057
f = 28 MHz.
Fig.13 Test circuit for class-AB operation.
September 1992
7
Philips Semiconductors
Product specification
VHF power MOS transistor
List of components (class-AB test circuit) COMPONENT C1, C3, C13, C14 C2, C8, C9 C4, C5 C6 C7 C10 C11, C12 C15 L1 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor VALUE 7 to 100 pF 75 pF 100 nF DIMENSIONS
BLF147
CATALOGUE NO. 2222 809 07015
2222 852 47104 2222 852 47104
multilayer ceramic chip capacitors in 3 x 100 nF parallel electrolytic capacitor multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) multilayer ceramic chip capacitor (note 1) 6 turns enamelled 0.7 mm copper wire stripline (note 2) 4 turns enamelled 1.5 mm copper wire grade 3B Ferroxcube wideband HF choke 3 turns enamelled 2.2 mm copper wire 1 W metal film resistor 0.4 W metal film resistor 0.4 W metal film resistor 1 W metal film resistor 79 nH length 8 mm; int. dia. 8 mm; leads 2 x 5 mm 2.2 F, 63 V 100 pF 150 nF 240 pF 145 nH length 5 mm; int. dia. 6 mm; leads 2 x 5 mm length 13 x 6 mm length 8 mm; int. dia. 10 mm; leads 2 x 5 mm
L2, L3 L4
41.1 148 nH
L5, L6 L7
4312 020 36642
R1, R2 R3 R4 R5 Notes
19.6 10 k 1 M 10
2322 153 51969 2322 151 71003 2322 151 71005 2322 153 51009
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm.
September 1992
8
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
handbook, halfpage
30
MGP058
handbook, halfpage
10
MGP059
GP (dB) 20
Zi () 5 ri
10
0 xi
0 0 10 20 f (MHz) 30
-5 0 10 20 f (MHz) 30
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 6.25 ; PL = 150 W (PEP); RL = 2.1 .
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 6.25 ; PL = 150 W (PEP); RL = 2.1 .
Fig.14 Gain as a function of frequency, typical values.
Fig.15 Input impedance as a function of frequency (series components), typical values.
handbook, halfpage
4
MGP061
handbook, halfpage
3
MGP062
Zi () 2 ri
ZL () 2 RL
0
xi
1
-2
0
XL
-4
0
50
100
150
f (MHz)
200
-1
0
50
100
150
f (MHz)
200
Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W.
Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W.
Fig.16 Input impedance as a function of frequency (series components), typical values.
Fig.17 Load impedance as a function of frequency (series components), typical values.
September 1992
9
Philips Semiconductors
Product specification
VHF power MOS transistor
BLF147
handbook, halfpage
30
MGP060
Gp (dB) 20
10
0 0 50 100 150 f (MHz) 200
Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W.
Fig.18 Power gain as a function of frequency, typical values.
September 1992
10
Philips Semiconductors
Product specification
VHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLF147
SOT121B
D
A F q U1 C B
H L b
c
4
3
w2 M C A
p
U2
D1
U3
w1 M A B
1
H
2
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.17 0.286 0.243 b 5.82 5.56 c 0.16 0.10 D D1 F 2.67 2.41 H 28.45 25.52 L 7.93 6.32 p 3.30 3.05 Q 4.45 3.91 q 18.42 U1 24.90 24.63 0.98 0.97 U2 6.48 6.22 0.255 0.245 U3 12.32 12.06 0.485 0.475 w1 0.51 0.02 w2 1.02 45 0.312 0.130 0.249 0.120 0.175 0.725 0.154 0.04
12.86 12.83 12.59 12.57
0.229 0.006 0.219 0.004
0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005
OUTLINE VERSION SOT121B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
September 1992
11
Philips Semiconductors
Product specification
VHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF147
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1992
12

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